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The analysis model of AlGaN/GaN HEMTs with electric field modulation effect

Yang, LY; Duan, BX; Dong, ZM; Wang, YD; Yang, YT

Yang, LY (reprint author), Xidian Univ, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian, Shaanxi, Peoples R China.

IETE TECHNICAL REVIEW, 0; ():

Abstract

This paper reviews the AlGaN/GaN HEMT devices with electric field modulation effects and proposes a uniform two-dimensional model of this type of devi......

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